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IPI111N15N3GAKSA1 Infineon
This is N-channel MOSFET 83 A 150 V OptiMOS 3 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IPI111N15N3GAKSA1. While 83 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4...
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Description
This is N-channel MOSFET 83 A 150 V OptiMOS 3 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IPI111N15N3GAKSA1. While 83 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.52mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 41 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 214 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.45mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 10.8 mω maximum drain source resistance.
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All products (new, refurbished, and repairs) are covered by the Industrial Automation Company's 2 Year Warranty. Manufacturer's Warranty does not apply.
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